
PNP Silicon Bipolar Junction Transistor (BJT) in a TO-92 package. Features a continuous collector current of -2A and a collector-emitter breakdown voltage of 70V. Offers a maximum power dissipation of 1W and a transition frequency of 100MHz. Designed for through-hole mounting with a lead-free, RoHS-compliant construction.
Diodes ZTX792A technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -75V |
| Collector Emitter Breakdown Voltage | 70V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 75V |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | -2A |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 100MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 2A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -70V |
| Weight | 0.016oz |
| Width | 2.41mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZTX792A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
