NPN Silicon Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 60V Collector-Emitter Breakdown Voltage (VCEO) and 5A Continuous Collector Current (IC). Offers a 150V Collector-Base Voltage (VCBO) and 6V Emitter-Base Voltage (VEBO). Operates with a 130MHz Transition Frequency and 1.2W Max Power Dissipation. Packaged in a 3-pin E-LINE TO-92 package, this component is RoHS compliant.
Frequency130MHz
PackageTO-92
Current Rating5A
MountingThrough Hole
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Technical Specifications
Diodes ZTX851 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
150V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
180mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
5A
Current Rating
5A
Emitter Base Voltage (VEBO)
6V
Frequency
130MHz
Gain Bandwidth Product
130MHz
Height
4.01mm
Lead Free
Lead Free
Length
4.77mm
Max Collector Current
5A
Max Frequency
130MHz
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.2W
Mount
Through Hole
Number of Elements
1
Package Quantity
4000
Packaging
Bulk
Polarity
NPN
Power Dissipation
1.2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
130MHz
DC Rated Voltage
60V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX851 Datasheet
Download the complete datasheet for Diodes ZTX851 to view detailed technical specifications.
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