NPN Silicon Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 100V collector-emitter breakdown voltage, 4A continuous collector current, and 130MHz transition frequency. Offers a 200V collector-base voltage and 1.2W maximum power dissipation. Packaged in a TO-92 compatible, 3-pin plastic/epoxy housing. RoHS compliant and lead-free.
Frequency130MHz
PackageTO-92
Current Rating4A
MountingThrough Hole
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Technical Specifications
Diodes ZTX853 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
200V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
160mV
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
200mV
Continuous Collector Current
4A
Current Rating
4A
Emitter Base Voltage (VEBO)
6V
Frequency
130MHz
Gain Bandwidth Product
130MHz
Height
4.01mm
hFE Min
100
Lead Free
Lead Free
Length
4.77mm
Max Collector Current
4A
Max Frequency
130MHz
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.2W
Mount
Through Hole
Number of Elements
1
Package Quantity
4000
Packaging
Bulk
Polarity
NPN
Power Dissipation
1.2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
130MHz
DC Rated Voltage
100V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX853 Datasheet
Download the complete datasheet for Diodes ZTX853 to view detailed technical specifications.
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