NPN silicon bipolar junction transistor for through-hole mounting. Features a continuous collector current of 4A, collector-emitter breakdown voltage of 150V, and a transition frequency of 90MHz. Housed in a TO-92 compatible plastic/epoxy package with 3 pins. Offers a maximum power dissipation of 1.2W and operates across a temperature range of -55°C to 200°C. Lead-free and RoHS compliant.
Frequency90MHz
PackageTO-92
Current Rating4A
MountingThrough Hole
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Technical Specifications
Diodes ZTX855 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
250V
Collector Emitter Breakdown Voltage
150V
Collector Emitter Saturation Voltage
210mV
Collector Emitter Voltage (VCEO)
150V
Collector-emitter Voltage-Max
260mV
Continuous Collector Current
4A
Current Rating
4A
Emitter Base Voltage (VEBO)
6V
Frequency
90MHz
Gain Bandwidth Product
90MHz
Height
4.01mm
Lead Free
Lead Free
Length
4.77mm
Max Collector Current
4A
Max Frequency
100MHz
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.2W
Mount
Through Hole
Number of Elements
1
Package Quantity
4000
Packaging
Bulk
Polarity
NPN
Power Dissipation
1.2W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
90MHz
DC Rated Voltage
150V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX855 Datasheet
Download the complete datasheet for Diodes ZTX855 to view detailed technical specifications.
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