
NPN Silicon Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-92 compatible E-LINE package. Features a continuous collector current of 5A, a collector-emitter breakdown voltage of 25V, and a collector base voltage of 60V. Offers a maximum power dissipation of 1.2W and a transition frequency of 100MHz. Operates across a temperature range of -55°C to 150°C, is lead-free, RoHS compliant, and REACH SVHC compliant.
Diodes ZTX869STZ technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector-emitter Voltage-Max | 220mV |
| Continuous Collector Current | 5A |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 100MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 25V |
| Weight | 0.016oz |
| Width | 2.41mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZTX869STZ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
