PNP Silicon Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 60V collector-emitter breakdown voltage (VCEO) and a continuous collector current rating of -4A. Offers a maximum power dissipation of 1.2W and a transition frequency of 120MHz. Packaged in a TO-92 compatible E-LINE package with 3 pins. Operating temperature range from -55°C to 200°C.
Frequency120MHz
PackageTO-92
Current Rating-4A
MountingThrough Hole
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Technical Specifications
Diodes ZTX951 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
300mV
Continuous Collector Current
-4A
Current Rating
-4A
Emitter Base Voltage (VEBO)
6V
Frequency
120MHz
Gain Bandwidth Product
120MHz
Height
4.01mm
Lead Free
Lead Free
Length
4.77mm
Max Collector Current
4A
Max Frequency
120MHz
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.2W
Mount
Through Hole
Number of Elements
1
Package Quantity
4000
Packaging
Bulk
Polarity
PNP
Power Dissipation
1.2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
120MHz
DC Rated Voltage
-60V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX951 Datasheet
Download the complete datasheet for Diodes ZTX951 to view detailed technical specifications.
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