PNP Bipolar Junction Transistor (BJT) in TO-92 package. Features a 60V collector-emitter breakdown voltage and a continuous collector current rating of -4A. Offers a maximum power dissipation of 1.2W and a transition frequency of 120MHz. Operates across a temperature range of -55°C to 150°C. RoHS and REACH SVHC compliant, with lead-free construction.
Diodes ZTX951STOA technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -100V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -4A |
| Current Rating | -4A |
| Emitter Base Voltage (VEBO) | -6V |
| Gain Bandwidth Product | 120MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 120MHz |
| DC Rated Voltage | -60V |
| Weight | 0.016oz |
| Width | 2.41mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZTX951STOA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
