PNP Silicon Bipolar Junction Transistor (BJT) for through-hole mounting. Features a continuous collector current of -4A, collector-emitter breakdown voltage of 60V, and a maximum collector-emitter voltage of 300mV. Operates with a gain bandwidth product and transition frequency of 120MHz. Housed in a TO-226-3 (E-LINE PACKAGE-3) compatible plastic/epoxy package with 3 pins. Rated for a maximum power dissipation of 1.2W and operates from -55°C to 150°C. Lead-free and RoHS compliant.
PackageTO-226-3
Current Rating-4A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Diodes ZTX951STZ technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | -100V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -4A |
| Current Rating | -4A |
| Emitter Base Voltage (VEBO) | -6V |
| Gain Bandwidth Product | 120MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 120MHz |
| DC Rated Voltage | -60V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZTX951STZ Datasheet
Download the complete datasheet for Diodes ZTX951STZ to view detailed technical specifications.
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