PNP Silicon Bipolar Junction Transistor (BJT) for through-hole mounting. Features a continuous collector current of -3.5A, a collector-emitter breakdown voltage of 100V, and a collector-emitter saturation voltage of 330mV. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.2W. This 3-pin transistor is housed in a TO-92 compatible E-LINE package.
PackageTO-92
Current Rating-3.5A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Diodes ZTX953STZ technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -140V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector-emitter Voltage-Max | 330mV |
| Continuous Collector Current | -3.5A |
| Current Rating | -3.5A |
| Emitter Base Voltage (VEBO) | -6V |
| Gain Bandwidth Product | 125MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 3.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 125MHz |
| DC Rated Voltage | -100V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZTX953STZ Datasheet
Download the complete datasheet for Diodes ZTX953STZ to view detailed technical specifications.
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