PNP silicon bipolar junction transistor with a continuous collector current of -2A and a collector-emitter breakdown voltage of 200V. Features a transition frequency of 110MHz, maximum power dissipation of 1.2W, and operates within a temperature range of -55°C to 200°C. Housed in a TO-92 compatible E-LINE package with 3 pins, supporting both through-hole and surface mount configurations. This lead-free, RoHS-compliant component is designed for general-purpose amplification and switching applications.
Diodes ZTX956STOA technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -220V |
| Collector Emitter Breakdown Voltage | 200V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | -2A |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | -6V |
| Gain Bandwidth Product | 110MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 2A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Through Hole, Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 110MHz |
| DC Rated Voltage | -200V |
| Weight | 0.016oz |
| Width | 2.41mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZTX956STOA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.