PNP Silicon Bipolar Junction Transistor (BJT) for through-hole mounting. Features a continuous collector current of -4.5A and a collector-emitter breakdown voltage of 12V. Offers a collector-emitter saturation voltage of -50mV and a maximum power dissipation of 1.2W. Operates across a temperature range of -55°C to 150°C with a transition frequency of 80MHz. Packaged in a TO-92 compatible E-Line package.
PackageTO-92-3
Current Rating-4.5A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Diodes ZTX968 technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -15V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -50mV |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -4.5A |
| Current Rating | -4.5A |
| Emitter Base Voltage (VEBO) | -6V |
| Gain Bandwidth Product | 80MHz |
| Height | 4.01mm |
| Length | 4.77mm |
| Max Collector Current | 4.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Through Hole |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 80MHz |
| DC Rated Voltage | -12V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZTX968 Datasheet
Download the complete datasheet for Diodes ZTX968 to view detailed technical specifications.
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