NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage and a 1A maximum collector current. Operates with a collector-emitter saturation voltage of 500mV. Housed in a compact SOT-323 surface mount package, this component offers a wide operating temperature range from -55°C to 150°C.
PackageSOT-323
Current Rating-1A
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes ZUMT491TA technical specifications.
General
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| DC Rated Voltage | -60V |
| Weight | 0.000212oz |
| Width | 1.26mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZUMT491TA Datasheet
Download the complete datasheet for Diodes ZUMT491TA to view detailed technical specifications.
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