NPN bipolar junction transistor (BJT) for small signal applications. Features a continuous collector current of 1.5A and a collector-emitter voltage (VCEO) of 15V. Operates with a transition frequency of 180MHz and a maximum power dissipation of 500mW. Packaged in a SOT-323 surface mount case, this silicon transistor is RoHS compliant and suitable for a wide temperature range from -55°C to 150°C.
Frequency180MHz
PackageSOT-323
Current Rating1.5A
MountingSurface Mount
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Technical Specifications
Diodes ZUMT617TA technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
15V
Collector Emitter Breakdown Voltage
15V
Collector Emitter Saturation Voltage
205mV
Collector Emitter Voltage (VCEO)
15V
Collector-emitter Voltage-Max
245mV
Continuous Collector Current
1.5A
Current Rating
1.5A
Emitter Base Voltage (VEBO)
5V
Frequency
180MHz
Gain Bandwidth Product
180MHz
Height
1mm
Length
2.2mm
Max Breakdown Voltage
15V
Max Collector Current
1.5A
Max Frequency
180MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
180MHz
DC Rated Voltage
15V
Weight
0.000212oz
Width
1.26mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZUMT617TA Datasheet
Download the complete datasheet for Diodes ZUMT617TA to view detailed technical specifications.
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