NPN silicon bipolar junction transistor for small signal applications. Features a 1A continuous collector current and 50V collector-emitter breakdown voltage. Operates with a 215MHz transition frequency and a maximum power dissipation of 385mW. Packaged in a compact SOT-323 surface mount case, this component is lead-free and RoHS compliant, suitable for operation between -55°C and 150°C.
Diodes ZUMT619TC technical specifications.
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 270mV |
| Continuous Collector Current | 1A |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 215MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 385mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 215MHz |
| DC Rated Voltage | 50V |
| Weight | 0.000212oz |
| Width | 1.26mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZUMT619TC to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.