PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 12V collector-emitter breakdown voltage (VCEO) and a continuous collector current of -1.25A. Operates with a transition frequency of 220MHz and a maximum power dissipation of 500mW. Packaged in a SOT-323 surface mount case, this lead-free component is RoHS and REACH SVHC compliant, operating across a temperature range of -55°C to 150°C.
Frequency220MHz
PackageSOT-323
Current Rating-1.25A
MountingSurface Mount
Quick Jump:
Technical Specifications
Diodes ZUMT717TA technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
12V
Collector Emitter Breakdown Voltage
12V
Collector Emitter Saturation Voltage
-185mV
Collector Emitter Voltage (VCEO)
12V
Collector-emitter Voltage-Max
240mV
Continuous Collector Current
-1.25A
Current Rating
-1.25A
Emitter Base Voltage (VEBO)
5V
Frequency
220MHz
Gain Bandwidth Product
220MHz
Height
1mm
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
12V
Max Collector Current
1.25A
Max Frequency
220MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
220MHz
DC Rated Voltage
-12V
Weight
0.000212oz
Width
1.26mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZUMT717TA Datasheet
Download the complete datasheet for Diodes ZUMT717TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
