N-channel JFET featuring 450V drain-to-source breakdown voltage and 90mA continuous drain current. This silicon field-effect transistor offers a low 50 Ohm drain-to-source resistance and a 3V threshold voltage. Designed for through-hole mounting, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 700mW. The component is supplied in a TO-92 compatible E-line package.
PackageTO-92-3
Current Rating90mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Diodes ZVN0545A technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 90mA |
| Current Rating | 90mA |
| Drain to Source Breakdown Voltage | 450V |
| Drain to Source Resistance | 50R |
| Drain to Source Voltage (Vdss) | 450V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.01mm |
| Input Capacitance | 70pF |
| Length | 4.77mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 700mW |
| Radiation Hardening | No |
| Rds On Max | 50R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 450V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZVN0545A Datasheet
Download the complete datasheet for Diodes ZVN0545A to view detailed technical specifications.
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