N-channel JFET featuring 450V drain-to-source breakdown voltage and 90mA continuous drain current. This silicon field-effect transistor offers a low 50 Ohm drain-to-source resistance and a 3V threshold voltage. Designed for through-hole mounting, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 700mW. The component is supplied in a TO-92 compatible E-line package.
PackageTO-92-3
Current Rating90mA
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Diodes ZVN0545A technical specifications.
General
Package/Case
TO-92-3
Continuous Drain Current (ID)
90mA
Current Rating
90mA
Drain to Source Breakdown Voltage
450V
Drain to Source Resistance
50R
Drain to Source Voltage (Vdss)
450V
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Height
4.01mm
Input Capacitance
70pF
Length
4.77mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
700mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
4000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
700mW
Radiation Hardening
No
Rds On Max
50R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
3V
Turn-Off Delay Time
16ns
Turn-On Delay Time
7ns
DC Rated Voltage
450V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZVN0545A Datasheet
Download the complete datasheet for Diodes ZVN0545A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
