N-Channel MOSFET, 450V Vds, 140mA ID, 50 Ohm Rds On. This silicon Metal-Oxide Semiconductor FET features a 3V threshold voltage and 70pF input capacitance. Designed for surface mounting in a SOT-223 package, it offers a maximum power dissipation of 2W and operates across a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 7ns and fall time of 10ns.
Diodes ZVN0545GTA technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 140mA |
| Current Rating | 140mA |
| Drain to Source Breakdown Voltage | 450V |
| Drain to Source Resistance | 50R |
| Drain to Source Voltage (Vdss) | 450V |
| Drain-source On Resistance-Max | 50R |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.65mm |
| Input Capacitance | 70pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 50R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 450V |
| Weight | 0.000282oz |
| Width | 3.7mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZVN0545GTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.