N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for power applications. Features a 60V Drain-Source Voltage (Vdss) and a continuous drain current of 710mA. Offers a low Drain-Source On-Resistance (Rds On) of 2 Ohms. This 1-element transistor is housed in a SOT-223 surface-mount package with 4 pins. Operating temperature range is -55°C to 150°C with a maximum power dissipation of 2W.
PackageSOT-223
Current Rating710mA
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Diodes ZVN2106GTA technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
710mA
Current Rating
710mA
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
2R
Dual Supply Voltage
60V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
1.65mm
Input Capacitance
75pF
Lead Free
Lead Free
Length
6.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
2.4V
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
2R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
2.4V
Turn-Off Delay Time
12ns
Turn-On Delay Time
7ns
DC Rated Voltage
60V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZVN2106GTA Datasheet
Download the complete datasheet for Diodes ZVN2106GTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
