N-Channel Silicon Metal-Oxide Semiconductor FET, a single-element JFET designed for general-purpose switching and amplification. Features a 100V Drain-Source Breakdown Voltage (Vdss) and a continuous drain current (ID) of 320mA. Offers a low Drain-Source On-Resistance (Rds On) of 4 Ohms. Operates within a temperature range of -55°C to 150°C and is housed in a TO-92 compatible E-Line package. This through-hole component boasts fast switching times with a turn-on delay of 7ns and a fall time of 8ns.
PackageTO-92-3
Current Rating230mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Diodes ZVN2110A technical specifications.
General
Package/Case
TO-92-3
Continuous Drain Current (ID)
320mA
Current Rating
230mA
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
4R
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
4R
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
4.01mm
Input Capacitance
75pF
Lead Free
Lead Free
Length
4.77mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
700mW
Mount
Through Hole
Number of Channels
1
Package Quantity
4000
Packaging
Bulk
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
4R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
2.4V
Turn-Off Delay Time
13ns
Turn-On Delay Time
7ns
DC Rated Voltage
100V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZVN2110A Datasheet
Download the complete datasheet for Diodes ZVN2110A to view detailed technical specifications.
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