N-channel JFET with 100V drain-source voltage and 320mA continuous drain current. Features 4Ω drain-source resistance, 75pF input capacitance, and 7ns turn-on delay. This silicon metal-oxide semiconductor FET is housed in a TO-92 compatible E-line package, suitable for through-hole mounting. Operating temperature range is -55°C to 150°C with 700mW power dissipation.
PackageTO-92-3
Current Rating230mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Diodes ZVN2110ASTZ technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 320mA |
| Current Rating | 230mA |
| Drain to Source Resistance | 4R |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.01mm |
| Input Capacitance | 75pF |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 700mW |
| Radiation Hardening | No |
| Rds On Max | 4R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 100V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZVN2110ASTZ Datasheet
Download the complete datasheet for Diodes ZVN2110ASTZ to view detailed technical specifications.
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