
N-Channel Silicon Metal-oxide Semiconductor FET for small signal applications. Features a continuous drain current of 150mA and a drain-to-source voltage of 60V. Offers a low drain-source on-resistance of 5 Ohms. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 330mW. Packaged in a SOT-23 surface mount case, this RoHS compliant component is supplied on tape and reel.
Diodes ZVN3306FTA technical specifications.
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