N-Channel Silicon Metal-oxide Semiconductor FET for small signal applications. Features a continuous drain current of 150mA and a drain-to-source voltage of 60V. Offers a low drain-source on-resistance of 5 Ohms. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 330mW. Packaged in a SOT-23 surface mount case, this RoHS compliant component is supplied on tape and reel.
PackageSOT-23
Current Rating150mA
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Diodes ZVN3306FTA technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
150mA
Current Rating
150mA
Drain to Source Resistance
5R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
5R
Dual Supply Voltage
60V
Fall Time
4ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
35pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
330mW
Mount
Surface Mount
Nominal Vgs
2.4V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
330mW
Radiation Hardening
No
Rds On Max
5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
2.4V
Turn-Off Delay Time
4ns
Turn-On Delay Time
3ns
DC Rated Voltage
60V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZVN3306FTA Datasheet
Download the complete datasheet for Diodes ZVN3306FTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
