N-Channel Silicon Metal-oxide Semiconductor FET for small signal applications. Features 100V drain-source voltage (Vdss) and 200mA continuous drain current (ID). Offers a low drain-source on-resistance (Rds On) of 10 Ohms. Operates within a temperature range of -55°C to 150°C. Packaged in a TO-92 compatible E-Line package for through-hole mounting.
PackageTO-92-3
Current Rating200mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Diodes ZVN3310A technical specifications.
General
Package/Case
TO-92-3
Continuous Drain Current (ID)
200mA
Current Rating
200mA
Drain to Source Resistance
10R
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
10R
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Height
4.01mm
Input Capacitance
40pF
Lead Free
Lead Free
Length
4.77mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Channels
1
Package Quantity
4000
Packaging
Bulk
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
10R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
2.4V
Turn-Off Delay Time
6ns
Turn-On Delay Time
5ns
DC Rated Voltage
100V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZVN3310A Datasheet
Download the complete datasheet for Diodes ZVN3310A to view detailed technical specifications.
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