N-Channel JFET for small signal applications, featuring a 100V drain-source voltage and 200mA continuous drain current. This silicon FET offers a low 10 Ohm drain-source resistance and operates within a -55°C to 150°C temperature range. Designed for through-hole mounting in a TO-92 compatible E-Line package, it boasts fast switching times with turn-on delay of 5ns and fall time of 7ns. The component is RoHS and REACH SVHC compliant, supplied on tape and reel.
PackageTO-92-3
Current Rating200mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Diodes ZVN3310ASTZ technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 200mA |
| Current Rating | 200mA |
| Drain to Source Resistance | 10R |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.01mm |
| Input Capacitance | 40pF |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 10R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 6ns |
| Turn-On Delay Time | 5ns |
| DC Rated Voltage | 100V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZVN3310ASTZ Datasheet
Download the complete datasheet for Diodes ZVN3310ASTZ to view detailed technical specifications.
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