
N-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET designed for small signal applications. Features a 100V Drain to Source Voltage (Vdss) and a continuous drain current (ID) of 100mA. Offers a low Drain to Source On Resistance (Rds On) of 10 Ohms. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 330mW. Packaged in a SOT-23 surface mount case, this RoHS compliant component is supplied on tape and reel.
Diodes ZVN3310FTA technical specifications.
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