N-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET designed for small signal applications. Features a 100V Drain to Source Voltage (Vdss) and a continuous drain current (ID) of 100mA. Offers a low Drain to Source On Resistance (Rds On) of 10 Ohms. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 330mW. Packaged in a SOT-23 surface mount case, this RoHS compliant component is supplied on tape and reel.
PackageSOT-23
Voltage100V
Current100mA
Current Rating100mA
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Technical Specifications
Diodes ZVN3310FTA technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
100mA
Current
100mA
Current Rating
100mA
Drain to Source Resistance
10R
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
10R
Dual Supply Voltage
100V
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
40pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
330mW
Mount
Surface Mount
Nominal Vgs
2.4V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
330mW
Radiation Hardening
No
Rds On Max
10R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
2.4V
Turn-Off Delay Time
4ns
Turn-On Delay Time
3ns
Voltage
100V
DC Rated Voltage
100V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZVN3310FTA Datasheet
Download the complete datasheet for Diodes ZVN3310FTA to view detailed technical specifications.
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