N-Channel Silicon Metal-oxide Semiconductor FET for small signal applications. Features a 200V drain-source voltage (Vdss) and 60mA continuous drain current (ID). Offers a low drain-source on-resistance (Rds On) of 25 Ohms. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 330mW. Packaged in a SOT-23 surface mount case, supplied on tape and reel.
PackageSOT-23
Current Rating60mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZVN3320FTA technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
60mA
Current Rating
60mA
Drain to Source Resistance
25R
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
25R
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
45pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
330mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
330mW
Radiation Hardening
No
Rds On Max
25R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
1V
Turn-Off Delay Time
6ns
Turn-On Delay Time
5ns
DC Rated Voltage
200V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZVN3320FTA Datasheet
Download the complete datasheet for Diodes ZVN3320FTA to view detailed technical specifications.
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