N-channel silicon JFET for small signal applications. Features 60V drain-source voltage (Vdss) and 200mA continuous drain current (ID). Offers a low drain-source on-resistance (Rds On) of 5 Ohms. Operates across a wide temperature range from -55°C to 150°C. Packaged in a compact SOT-23-3 surface-mount case.
PackageSOT-23-3
Current Rating200mA
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Diodes ZVN4106FTA technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
200mA
Current Rating
200mA
Drain to Source Resistance
5R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
5R
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
35pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
330mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
350mW
Radiation Hardening
No
Rds On Max
2.5R
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
6ns
Turn-On Delay Time
5ns
DC Rated Voltage
60V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZVN4106FTA Datasheet
Download the complete datasheet for Diodes ZVN4106FTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.