N-channel MOSFET with 60V drain-source breakdown voltage and 600mA continuous drain current. Features a low Rds(on) of 1 Ohm, 8ns turn-on delay, and 12ns fall time. This through-hole component is housed in a TO-92-3 package, offering a maximum power dissipation of 700mW and operating temperature range of -55°C to 150°C.
PackageTO-92-3
Current Rating600mA
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Diodes ZVN4206AVSTOA technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 600mA |
| Current Rating | 600mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 100pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 700mW |
| Rds On Max | 1R |
| Reach SVHC Compliant | Yes |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 60V |
| Weight | 0.016oz |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZVN4206AVSTOA Datasheet
Download the complete datasheet for Diodes ZVN4206AVSTOA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
