N-channel MOSFET transistor in a TO-92-3 package, featuring a 60V drain-source voltage (Vdss) and a continuous drain current (ID) of 600mA. Offers a maximum drain-source on-resistance (Rds On Max) of 1 Ohm, with a typical fall time of 12ns and turn-on delay time of 8ns. Designed for through-hole mounting, this component operates across a temperature range of -55°C to 150°C and has a maximum power dissipation of 700mW. It is RoHS and REACH SVHC compliant.
PackageTO-92-3
Current Rating600mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Diodes ZVN4206AVSTZ technical specifications.
General
Package/Case
TO-92-3
Continuous Drain Current (ID)
600mA
Current Rating
600mA
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
1R
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
4.01mm
Input Capacitance
100pF
Lead Free
Lead Free
Length
4.77mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
700mW
Mount
Through Hole
Number of Channels
1
Package Quantity
2000
Packaging
Cut Tape
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
1R
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
12ns
Turn-On Delay Time
8ns
DC Rated Voltage
60V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZVN4206AVSTZ Datasheet
Download the complete datasheet for Diodes ZVN4206AVSTZ to view detailed technical specifications.
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