
N-channel MOSFET transistor in a TO-92-3 package, featuring a 60V drain-source voltage (Vdss) and a continuous drain current (ID) of 600mA. Offers a maximum drain-source on-resistance (Rds On Max) of 1 Ohm, with a typical fall time of 12ns and turn-on delay time of 8ns. Designed for through-hole mounting, this component operates across a temperature range of -55°C to 150°C and has a maximum power dissipation of 700mW. It is RoHS and REACH SVHC compliant.
Diodes ZVN4206AVSTZ technical specifications.
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