N-Channel JFET for small signal applications, featuring a 60V drain-source breakdown voltage and 1.1A continuous drain current. This silicon MOSFET offers a maximum drain-source on-resistance of 330mR and a threshold voltage of 3V. Designed for through-hole mounting, it comes in a TO-92 compatible E-Line package with a 3-lead configuration. Operating across a wide temperature range of -55°C to 150°C, this RoHS compliant component boasts fast switching times with turn-on delay at 8ns and fall time at 25ns.
PackageTO-92-3
Current Rating1.1A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Diodes ZVN4306A technical specifications.
General
Package/Case
TO-92-3
Continuous Drain Current (ID)
1.1A
Current Rating
1.1A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
450mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
330mR
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
4.01mm
Input Capacitance
350pF
Lead Free
Lead Free
Length
4.77mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
850mW
Mount
Through Hole
Number of Channels
1
Package Quantity
4000
Packaging
Bulk
Polarity
N-CHANNEL
Rds On Max
330mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
3V
Turn-Off Delay Time
30ns
Turn-On Delay Time
8ns
DC Rated Voltage
60V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZVN4306A Datasheet
Download the complete datasheet for Diodes ZVN4306A to view detailed technical specifications.
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