N-channel JFET with 100V drain-source voltage and 900mA continuous drain current. Features a maximum drain-source on-resistance of 500mR and a threshold voltage of 3V. This silicon MOSFET offers fast switching with turn-on delay of 8ns and fall time of 25ns. Operates across a wide temperature range from -55°C to 150°C, with 850mW power dissipation. Packaged in a TO-92 compatible E-line package for through-hole mounting.
PackageTO-92-3
Current Rating900mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Diodes ZVN4310A technical specifications.
General
Package/Case
TO-92-3
Continuous Drain Current (ID)
900mA
Current Rating
900mA
Drain to Source Resistance
650mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
500mR
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
4.01mm
Input Capacitance
350pF
Lead Free
Lead Free
Length
4.77mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
850mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
4000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
850mW
Radiation Hardening
No
Rds On Max
500mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
3V
Turn-Off Delay Time
30ns
Turn-On Delay Time
8ns
DC Rated Voltage
100V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZVN4310A Datasheet
Download the complete datasheet for Diodes ZVN4310A to view detailed technical specifications.
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