N-Channel Silicon Metal-Oxide Semiconductor FET for small signal applications. Features a 240V Drain to Source Breakdown Voltage (Vdss) and 300mA Continuous Drain Current (ID). Offers a low Drain-source On Resistance-Max of 4.3 Ohms and a 500mA current rating. Packaged in a surface-mount SOT-89-3 with a 1W power dissipation. Operates from -55°C to 150°C, with fast switching times including a 2.5ns turn-on delay.
PackageSOT-89-3
Current Rating500mA
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Diodes ZVN4424ZTA technical specifications.
General
Package/Case
SOT-89-3
Continuous Drain Current (ID)
300mA
Current Rating
500mA
Drain to Source Breakdown Voltage
240V
Drain to Source Resistance
6R
Drain to Source Voltage (Vdss)
240V
Drain-source On Resistance-Max
4.3R
Fall Time
16ns
Gate to Source Voltage (Vgs)
40V
Height
1.6mm
Input Capacitance
200pF
Lead Free
Lead Free
Length
4.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
5.5R
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
40ns
Turn-On Delay Time
2.5ns
DC Rated Voltage
240V
Weight
0.004603oz
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZVN4424ZTA Datasheet
Download the complete datasheet for Diodes ZVN4424ZTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
