N-Channel Silicon Metal-Oxide Semiconductor FET for power applications. Features 100V drain-source voltage, 600mA continuous drain current, and 4.5 Ohm drain-source on-resistance. This single-element transistor offers a 2W power dissipation and operates within a temperature range of -55°C to 150°C. Packaged in a SOT-223 surface-mount case, it is RoHS and REACH SVHC compliant.
PackageSOT-223
Current Rating600mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZVNL110GTA technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 600mA |
| Current Rating | 600mA |
| Drain to Source Resistance | 4.5R |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 4.5R |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.65mm |
| Input Capacitance | 75pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 3R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 100V |
| Weight | 0.000282oz |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZVNL110GTA Datasheet
Download the complete datasheet for Diodes ZVNL110GTA to view detailed technical specifications.
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