ZVNL120GTC

N-Channel Silicon Metal-Oxide Semiconductor FET, a power field-effect transistor, features a 200V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 320mA. This surface-mount device, housed in a SOT-223 package, offers a maximum drain-to-source resistance (Rds On) of 10 ohms. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2W. Key switching characteristics include an 8ns turn-on delay and a 12ns fall time.