P-channel silicon JFET with 450V Drain-Source Voltage (Vdss) and 45mA Continuous Drain Current (ID). Features 150 Ohm maximum Drain-Source On Resistance (Rds On Max) and a -3V Threshold Voltage. This through-hole mounted transistor offers 10ns turn-on delay and 15ns fall time, with a maximum power dissipation of 700mW. Packaged in TO-92-3, it operates from -55°C to 150°C and is RoHS compliant.
PackageTO-92-3
Current Rating-45mA
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Diodes ZVP0545A technical specifications.
General
Package/Case
TO-92-3
Continuous Drain Current (ID)
45mA
Current Rating
-45mA
Drain to Source Resistance
150R
Drain to Source Voltage (Vdss)
450V
Drain-source On Resistance-Max
150R
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
4.01mm
Input Capacitance
120pF
Lead Free
Lead Free
Length
4.77mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
700mW
Mount
Through Hole
Number of Channels
1
Package Quantity
4000
Packaging
Bulk
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
150R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
-3V
Turn-Off Delay Time
15ns
Turn-On Delay Time
10ns
DC Rated Voltage
-450V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZVP0545A Datasheet
Download the complete datasheet for Diodes ZVP0545A to view detailed technical specifications.
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