P-channel JFET with 60V Drain-Source Voltage (Vdss) and 280mA Continuous Drain Current (ID). Features 5 Ohm maximum Drain-Source On Resistance (Rds On Max) and 20V Gate-to-Source Voltage (Vgs). This silicon metal-oxide semiconductor FET offers fast switching with 7ns turn-on delay and 12ns turn-off delay. Packaged in a TO-92 compatible E-Line package for through-hole mounting, it operates from -55°C to 150°C with 700mW maximum power dissipation. RoHS compliant and lead-free.
PackageTO-92-3
Current Rating-280mA
MountingThrough Hole
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Diodes ZVP2106ASTOA technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 280mA |
| Current Rating | -280mA |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 5R |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.01mm |
| Input Capacitance | 100pF |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | -60V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZVP2106ASTOA Datasheet
Download the complete datasheet for Diodes ZVP2106ASTOA to view detailed technical specifications.
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