P-channel, silicon, metal-oxide semiconductor field-effect transistor (MOSFET) designed for small signal applications. Features a 60V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 280mA. Offers a low on-resistance (Rds On Max) of 5 Ohms and a gate-to-source voltage (Vgs) of 20V. Packaged in a TO-92 compatible E-Line package, suitable for through-hole mounting. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 700mW.
PackageTO-92-3
Current Rating-280mA
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Diodes ZVP2106ASTOB technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 280mA |
| Current Rating | -280mA |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 100pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | P-CHANNEL |
| Power Dissipation | 700mW |
| Rds On Max | 5R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | -60V |
| Weight | 0.016oz |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZVP2106ASTOB Datasheet
Download the complete datasheet for Diodes ZVP2106ASTOB to view detailed technical specifications.
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