
P-channel JFET for small signal applications. Features a 60V drain-source voltage (Vdss) and 90mA continuous drain current (ID). Offers a low drain-source on-resistance (Rds On) of 14 Ohms. Operates with a nominal gate-source voltage (Vgs) of -3.5V and a maximum gate-source voltage of 20V. Packaged in a SOT-23 surface-mount case, this RoHS compliant component has a power dissipation of 330mW and a fall time of 8ns.
Diodes ZVP3306FTA technical specifications.
Download the complete datasheet for Diodes ZVP3306FTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.