P-channel silicon JFET for small signal applications. Features 100V drain-source voltage (Vdss) and 75mA continuous drain current (ID). Offers a maximum drain-source on-resistance (Rds On) of 20 Ohms. Operates across a temperature range of -55°C to 150°C with a power dissipation of 330mW. Packaged in a SOT-23-3 surface-mount case.
PackageSOT-23-3
Voltage100V
Current75mA
Current Rating-75mA
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Technical Specifications
Diodes ZVP3310FTA technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
75mA
Current
75mA
Current Rating
-75mA
Drain to Source Resistance
20R
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
20R
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
1.02mm
Input Capacitance
50pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
330mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
330mW
Radiation Hardening
No
Rds On Max
20R
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
8ns
Turn-On Delay Time
8ns
Voltage
100V
DC Rated Voltage
-100V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZVP3310FTA Datasheet
Download the complete datasheet for Diodes ZVP3310FTA to view detailed technical specifications.
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