P-channel silicon JFET for small signal applications. Features 100V drain-source voltage (Vdss) and 75mA continuous drain current (ID). Offers a maximum drain-source on-resistance (Rds On) of 20 Ohms. Operates across a temperature range of -55°C to 150°C with a power dissipation of 330mW. Packaged in a SOT-23-3 surface-mount case.
PackageSOT-23-3
Voltage100V
Current75mA
Current Rating-75mA
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Technical Specifications
Diodes ZVP3310FTA technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 75mA |
| Current | 75mA |
| Current Rating | -75mA |
| Drain to Source Resistance | 20R |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 20R |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.02mm |
| Input Capacitance | 50pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 330mW |
| Radiation Hardening | No |
| Rds On Max | 20R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 8ns |
| Turn-On Delay Time | 8ns |
| Voltage | 100V |
| DC Rated Voltage | -100V |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZVP3310FTA Datasheet
Download the complete datasheet for Diodes ZVP3310FTA to view detailed technical specifications.
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