
P-channel JFET with 240V drain-source voltage and 200mA continuous drain current. Features 9 Ohm drain-source on-resistance, 40V gate-source voltage, and 750mW power dissipation. This silicon transistor is housed in a TO-92 package for through-hole mounting. Operates from -55°C to 150°C, with 8ns turn-on delay and 26ns turn-off delay.
Diodes ZVP4424A technical specifications.
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