P-channel MOSFET featuring 240V drain-source voltage (Vdss) and 480mA continuous drain current (ID). Offers a low 9 Ohm drain-source on-resistance (Rds On Max) and a 2.5W maximum power dissipation. This silicon Metal-oxide Semiconductor FET is housed in a SOT-223 surface mount package, ideal for applications requiring fast switching with 8ns turn-on and 20ns fall times. Compliant with RoHS and REACH SVHC standards.
PackageSOT-223
Current Rating-1A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes ZVP4424GTA technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 480mA |
| Current Rating | -1A |
| Drain to Source Resistance | 9R |
| Drain to Source Voltage (Vdss) | 240V |
| Drain-source On Resistance-Max | 9R |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 40V |
| Height | 1.65mm |
| Input Capacitance | 200pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 9R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | -240V |
| Weight | 0.000282oz |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZVP4424GTA Datasheet
Download the complete datasheet for Diodes ZVP4424GTA to view detailed technical specifications.
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