P-channel JFET for surface mount applications, featuring a 250V drain-source breakdown voltage and 197mA continuous drain current. This silicon metal-oxide semiconductor FET offers a low 14 Ohm drain-source on-resistance and operates within a -55°C to 150°C temperature range. Packaged in a SOT-23-6, it boasts fast switching speeds with turn-on delay of 1.53ns and fall time of 3.78ns. The component is RoHS and REACH SVHC compliant, with a maximum power dissipation of 1.1W.
PackageSOT-23-6
Current Rating-197mA
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes ZVP4525E6TA technical specifications.
General
Package/Case
SOT-23-6
Continuous Drain Current (ID)
197mA
Current Rating
-197mA
Drain to Source Breakdown Voltage
-250V
Drain to Source Resistance
14R
Drain to Source Voltage (Vdss)
250V
Drain-source On Resistance-Max
14R
Fall Time
3.78ns
Gate to Source Voltage (Vgs)
40V
Height
1.3mm
Input Capacitance
73pF
Lead Free
Lead Free
Length
3.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.1W
Radiation Hardening
No
Rds On Max
14R
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
17.5ns
Turn-On Delay Time
1.53ns
DC Rated Voltage
-250V
Weight
0.000529oz
Width
1.8mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZVP4525E6TA Datasheet
Download the complete datasheet for Diodes ZVP4525E6TA to view detailed technical specifications.
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