P-channel JFET for small signal applications, featuring a 250V drain-source voltage (Vdss) and 265mA continuous drain current (ID). This silicon MOSFET offers a maximum drain-source on-resistance (Rds On Max) of 14 Ohms and a gate-to-source voltage (Vgs) of 40V. Packaged in a SOT-223 surface-mount case, it operates within a temperature range of -55°C to 150°C with a 2W power dissipation. Includes fast switching times with turn-on delay of 1.53ns and fall time of 7.85ns.
PackageSOT-223
Current Rating-265mA
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes ZVP4525GTA technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
265mA
Current Rating
-265mA
Drain to Source Resistance
10R
Drain to Source Voltage (Vdss)
250V
Drain-source On Resistance-Max
14R
Fall Time
7.85ns
Gate to Source Voltage (Vgs)
40V
Height
1.65mm
Input Capacitance
73pF
Lead Free
Lead Free
Length
6.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
14R
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
17.5ns
Turn-On Delay Time
1.53ns
DC Rated Voltage
-250V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZVP4525GTA Datasheet
Download the complete datasheet for Diodes ZVP4525GTA to view detailed technical specifications.
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