
P-channel JFET for small signal applications, featuring a 250V drain-source voltage (Vdss) and 265mA continuous drain current (ID). This silicon MOSFET offers a maximum drain-source on-resistance (Rds On Max) of 14 Ohms and a gate-to-source voltage (Vgs) of 40V. Packaged in a SOT-223 surface-mount case, it operates within a temperature range of -55°C to 150°C with a 2W power dissipation. Includes fast switching times with turn-on delay of 1.53ns and fall time of 7.85ns.
Diodes ZVP4525GTA technical specifications.
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