The ZX3CD1S1M832TA PNP transistor has a collector-emitter breakdown voltage of 12V and a maximum collector current of 4A. It can handle a maximum power dissipation of 3W and operates within a temperature range of -20 to 125°C. The transistor is packaged in a 10-pin MLP832 package, measuring 3mm in length, 2mm in width, and 1mm in height. It is available in quantities of 3000 and is compliant with RoHS regulations.
Current Rating-4A
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes ZX3CD1S1M832TA technical specifications.
General
| Collector Base Voltage (VCBO) | -20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -240mV |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -4A |
| Emitter Base Voltage (VEBO) | -7.5V |
| Gain Bandwidth Product | 110MHz |
| Height | 1mm |
| Lead Free | Contains Lead |
| Length | 3mm |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 4A |
| Max Operating Temperature | 125°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 110MHz |
| DC Rated Voltage | -12V |
| Width | 2mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZX3CD1S1M832TA Datasheet
Download the complete datasheet for Diodes ZX3CD1S1M832TA to view detailed technical specifications.
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