PNP bipolar junction transistor in SOT-89 package, featuring a 40V collector-emitter breakdown voltage and a continuous collector current of -5.5A. This silicon transistor offers a gain bandwidth product of 152MHz and a maximum power dissipation of 3W. Designed for surface mounting, it operates across a temperature range of -55°C to 150°C and is RoHS compliant.
Frequency152MHz
PackageSOT-89
Current Rating-5.5A
MountingSurface Mount
Quick Jump:
Technical Specifications
Diodes ZX5T3ZTA technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
185mV
Continuous Collector Current
-5.5A
Current Rating
-5.5A
Emitter Base Voltage (VEBO)
-7.5V
Frequency
152MHz
Gain Bandwidth Product
152MHz
Height
1.6mm
hFE Min
200
Lead Free
Lead Free
Length
4.6mm
Max Breakdown Voltage
40V
Max Collector Current
5.5A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
3W
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
152MHz
DC Rated Voltage
-40V
Weight
0.001834oz
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZX5T3ZTA Datasheet
Download the complete datasheet for Diodes ZX5T3ZTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
