NPN bipolar junction transistor (BJT) for through-hole mounting in a TO-226-3 package. Features a 60V collector-emitter breakdown voltage and a 4.5A continuous collector current. Offers a maximum power dissipation of 1W and operates across a temperature range of -55°C to 150°C. Includes a 130MHz transition frequency and a 7V emitter-base voltage.
PackageTO-226-3
Current Rating4.5A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Diodes ZX5T851A technical specifications.
General
Package/Case
TO-226-3
Collector Base Voltage (VCBO)
150V
Collector Emitter Breakdown Voltage
60V
Collector-emitter Voltage-Max
210mV
Continuous Collector Current
4.5A
Current Rating
4.5A
Emitter Base Voltage (VEBO)
7V
Gain Bandwidth Product
130MHz
Height
4.01mm
Lead Free
Lead Free
Length
4.77mm
Max Collector Current
4.5A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Package Quantity
4000
Packaging
Bulk
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
Yes
Transition Frequency
130MHz
DC Rated Voltage
60V
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZX5T851A Datasheet
Download the complete datasheet for Diodes ZX5T851A to view detailed technical specifications.
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