NPN bipolar junction transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage and a 4.5A maximum collector current. Operates with a 130MHz transition frequency and a minimum hFE of 100. Housed in a TO-226-3 package for through-hole mounting. Compliant with RoHS and REACH SVHC standards, operating from -55°C to 150°C.
PackageTO-226-3
Current Rating4.5A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Diodes ZX5T851ASTZ technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 150V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 210mV |
| Current Rating | 4.5A |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 130MHz |
| Height | 4.01mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 4.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 130MHz |
| DC Rated Voltage | 60V |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZX5T851ASTZ Datasheet
Download the complete datasheet for Diodes ZX5T851ASTZ to view detailed technical specifications.
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