PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a continuous collector current of -5.5A and a collector-emitter breakdown voltage of 30V. Offers a maximum power dissipation of 3W and a transition frequency of 110MHz. Packaged in a SOT-223 case, this component is lead-free and RoHS compliant.
Frequency110MHz
PackageSOT-223
Current Rating-5.5A
MountingSurface Mount
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Technical Specifications
Diodes ZX5T949GTA technical specifications.
General
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 210mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 210mV |
| Continuous Collector Current | -5.5A |
| Current Rating | -5.5A |
| Emitter Base Voltage (VEBO) | -7V |
| Gain Bandwidth Product | 110MHz |
| Height | 1.65mm |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 5.5A |
| Max Frequency | 110MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 110MHz |
| DC Rated Voltage | -30V |
| Weight | 0.000282oz |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZX5T949GTA Datasheet
Download the complete datasheet for Diodes ZX5T949GTA to view detailed technical specifications.
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