PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-223 surface mount package. Features a continuous collector current of -5A and a collector emitter breakdown voltage of 100V. Offers a transition frequency of 125MHz and a maximum power dissipation of 3W. Operates within a temperature range of -55°C to 150°C.
Frequency125MHz
PackageSOT-223
Current Rating-5A
MountingSurface Mount
Quick Jump:
Technical Specifications
Diodes ZX5T953GTA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
140V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
-340mV
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
340mV
Continuous Collector Current
-5A
Current Rating
-5A
Emitter Base Voltage (VEBO)
-7V
Frequency
125MHz
Gain Bandwidth Product
125MHz
Height
1.65mm
hFE Min
15
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
100V
Max Collector Current
5A
Max Frequency
125MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
3W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
125MHz
DC Rated Voltage
-100V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZX5T953GTA Datasheet
Download the complete datasheet for Diodes ZX5T953GTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
