PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a 140V collector-emitter breakdown voltage (VCEO) and a continuous collector current rating of -3A. Offers a maximum power dissipation of 2.1W and a transition frequency of 120MHz. Packaged in a 3-pin SOT-89 case, this component is RoHS and REACH SVHC compliant.
Frequency120MHz
PackageSOT-89-3
Current Rating-3A
MountingSurface Mount
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Technical Specifications
Diodes ZX5T955ZTA technical specifications.
General
Package/Case
SOT-89-3
Collector Base Voltage (VCBO)
180V
Collector Emitter Breakdown Voltage
140V
Collector Emitter Saturation Voltage
-37mV
Collector Emitter Voltage (VCEO)
140V
Collector-emitter Voltage-Max
330mV
Continuous Collector Current
-3A
Current Rating
-3A
Emitter Base Voltage (VEBO)
-7V
Frequency
120MHz
Gain Bandwidth Product
120MHz
Height
1.6mm
Lead Free
Lead Free
Length
4.6mm
Max Breakdown Voltage
140V
Max Collector Current
3A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
2.1W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
120MHz
DC Rated Voltage
-140V
Weight
0.004603oz
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZX5T955ZTA Datasheet
Download the complete datasheet for Diodes ZX5T955ZTA to view detailed technical specifications.
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