High-performance IC gate driver for IGBT and MOSFET applications. Features a dual terminal configuration within a compact R-PDSO-G6 (SOT363) package, measuring 2.15mm in length and 1.3mm in width. Operates across a wide temperature range from -55°C to 150°C, meeting MILITARY temperature grade and AEC-Q101 screening levels. This buffer or inverter-based MOSFET driver offers true output polarity and a single function.
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Technical Specifications
Diodes ZXGD3009DYTA technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 6 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| JEDEC Package Code | R-PDSO-G6 |
| Width | 1.3 |
| Length | 2.15 |
| Number of Functions | 1 |
| Temperature Grade | MILITARY |
| Output Polarity | TRUE |
| Screening Level | AEC-Q101 |
| Interface IC Type | BUFFER OR INVERTER BASED MOSFET DRIVER |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Diodes ZXGD3009DYTA Datasheet
Download the complete datasheet for Diodes ZXGD3009DYTA to view detailed technical specifications.
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